Superconductivity in heavily compensated Mg-doped InN

Superconductivity in heavily boron-doped silicon carbide.

The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped ...

Interactions and superconductivity in heavily doped MoS2

We analyze the microscopic origin and the physical properties of the superconducting phase recently observed in MoS2. We show how the combination of the valley structure of the conduction band, the density dependence of the screening of the long-range Coulomb interactions, the short-range electronic repulsion, and the relative weakness of the electron-phonon interactions makes possible the exis...

Hole transport and photoluminescence in Mg-doped InN

N. Miller, J. W. Ager III, H. M. Smith III, M. A. Mayer, K. M. Yu, E. E. Haller, W. Walukiewicz, W. J. Schaff, C. Gallinat, G. Koblmüller, and J. S. Speck Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Department of Materials Science and Engineering, University of California—Berkeley, Berkeley, California 94720, USA Department of Electrical a...

Structural differences in Mg-doped InN – indication of polytypism

Transmission Electron Microscopy shows that the InN samples doped with either increasing or constant Mg concentration follow a cation or anion substrate polarity. In-polar samples change growth polarity when the Mg concentration is >10 cm. N-polar samples have much higher density of planar defects than In-polar samples and their presence leads to a decrease in dislocation density. In the N-pola...

Advantage on Superconductivity of Heavily Boron-Doped (111) Diamond Films